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Single-Step Patterning of Multilayer Metallurgy

IP.com Disclosure Number: IPCOM000103171D
Original Publication Date: 1990-Jul-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 23K

Publishing Venue

IBM

Related People

Moylan, C: AUTHOR [+2]

Abstract

Irradiation of "sandwiches" containing layers of five different metals with patterned ultraviolet light in the presence of CCl3Br vapor leads to patterned etching of the entire multilayer stack. The patterned light is the output of an excimer laser which has passed through a mask. The laser fluences required to observe etching are far below the ablation threshold of most metals. For example, at 248 nm only 300 mJ-cm-2 is needed to achieve etching. Thus, microelectronic wiring can be formed by evaporating or sputtering blanket layers of metal followed by one step of dry laser etching. The material left behind by the process is not contaminated by the CCl3Br.

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Single-Step Patterning of Multilayer Metallurgy

      Irradiation of "sandwiches" containing layers of five different
metals with patterned ultraviolet light in the presence of CCl3Br
vapor leads to patterned etching of the entire multilayer stack.  The
patterned light is the output of an excimer laser which has passed
through a mask.  The laser fluences required to observe etching are
far below the ablation threshold of most metals.  For example, at 248
nm only 300 mJ-cm-2 is needed to achieve etching.  Thus,
microelectronic wiring can be formed by evaporating or sputtering
blanket layers of metal followed by one step of dry laser etching.
The material left behind by the process is not contaminated by the
CCl3Br.

      Disclosed anonymously.