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Selectively Grown, Self-Aligned, Isolated Integrated Circuit Devices

IP.com Disclosure Number: IPCOM000103178D
Original Publication Date: 1990-Jul-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 38K

Publishing Venue

IBM

Related People

Kuech, TF: AUTHOR [+2]

Abstract

Fabrication of self-aligned, smaller integrated circuit devices with dielectric isolation is achieved with epitaxial growth only on unmasked regions.

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Selectively Grown, Self-Aligned, Isolated Integrated Circuit Devices

      Fabrication of self-aligned, smaller integrated circuit devices
with dielectric isolation is achieved with epitaxial growth only on
unmasked regions.

      A substrate 1, shown in Fig. 1, is prepared by forming wells 2
having dielectric sidewalls 3.  Using selective epitaxial growth,
multiple layers 4 of semiconductor material can be deposited parallel
to the substrate surface but not exceeding the height of the
substrate surface 5, as in Fig. 2.  Contact of intermediate ones of
layers 4 can be brought to the surface by forming sidewalls 6 down to
the desired layer.  Planarizing regrowth 7 provides contact, shown in
Fig. 3.  Such structures require selective epitaxy that does not
deposit material on the substrate surface dielectric.

      This structure can be used for discrete devices or as a
building block for circuits, such as emitter-coupled logic or
integrated injection logic that have multiple emitters or collectors.
In the latter logic, current drivers can be grown and optimized for
high performance.

      Disclosed anonymously.