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Browse Prior Art Database

Hydrogen Diffusion Barrier for Microelectronic Devices

IP.com Disclosure Number: IPCOM000103219D
Original Publication Date: 1990-Aug-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 27K

Publishing Venue

IBM

Related People

Schuessler, PW: AUTHOR

Abstract

Iron based alloys are commonly used for making hermetically sealed microelectronic packages that must operate in the microwave region, i.e., in the gigahertz range. However, such alloys are normally annealed in hydrogen to release built-in stresses from processes. As a function of time, the absorbed hydrogen diffuses into the cavity of the device and reduces oxides and/or forms hydrides which eventually destroy the performance of the device.

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This is the abbreviated version, containing approximately 100% of the total text.

Hydrogen Diffusion Barrier for Microelectronic Devices

      Iron based alloys are commonly used for making hermetically
sealed microelectronic packages that must operate in the microwave
region, i.e., in the gigahertz range.  However, such alloys are
normally annealed in hydrogen to release built-in stresses from
processes.  As a function of time, the absorbed hydrogen diffuses
into the cavity of the device and reduces oxides and/or forms
hydrides which eventually destroy the performance of the device.

      It has been shown that an effective barrier to this diffusing
gas can be formed of ferrous and ferric oxides by a thermal treatment
in air.  An exposure of the finished package metal for 100 hours at
320oC #10oC has been shown to provide a sufficiently thick surface
oxide that hydrogen diffusion is subsequently eliminated and device
performance is now assured.

      Disclosed anonymously.