Browse Prior Art Database

POC13 Depox (Deposition And Oxidation) Process

IP.com Disclosure Number: IPCOM000103224D
Original Publication Date: 1990-Aug-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 38K

Publishing Venue

IBM

Related People

DeMeo Jr, AA: AUTHOR

Abstract

This article describes an improved means for executing phosphorus (POC13) N+ diffusion into silicon and growing an oxide over the diffused surface. The disclosed process reduces cycle time, the number of furnaces required, and operator time and process interaction.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 94% of the total text.

POC13 Depox (Deposition And Oxidation) Process

      This article describes an improved means for executing
phosphorus (POC13) N+ diffusion into silicon and growing an oxide
over the diffused surface.  The disclosed process reduces cycle time,
the number of furnaces required, and operator time and process
interaction.

      Phosphor diffusions are an integral part of semiconductor
processing.  Current deposition and oxidation practice on silicon
wafers involves the following three steps:
      1)   PSG glass deposition using a POC13 source.
      2)   Removal of PSG glass by HF wet etch.
      3)   Growing SiO2 in an oxidizing ambient.

      Steps 1) and 3) are required to be carried out in separate
furnaces as separate operations.

      The disclosed process consists of the following steps:
      1)   Deposition of PSG glass on a silicon surface, at the
reach-through-diffusion sector of wafer processing, using a POC13
source.
      2)   Driving the phosphorus into the silicon via an argon
anneal.
      3)   Growing SiO2 in an oxidizing ambient as a passivation
layer.

      In contrast to existing practice, the disclosed process can be
carried out in a single furnace, with no intervening operations
(which means a reduction in the number of steps requiring operator
interaction).  It yields oxide characteristics and a reach-through
diffusion profile similar to that obtained with existing practice,
and elimin...