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Nitrogen Etching of Resist Coated Low Oxidation Resistant Metals

IP.com Disclosure Number: IPCOM000103244D
Original Publication Date: 1990-Aug-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 37K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+3]

Abstract

This disclosure describes a method for the removal of resist from materials, in particular, those materials that possess a low oxidation resistance. The method to be used involves the use of a nitrogen ion beam or a mixed nitrogen/inert gas ion beam (i.e. Ar gas) to remove the resist.

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Nitrogen Etching of Resist Coated Low Oxidation Resistant Metals

      This disclosure describes a method for the removal of resist
from materials, in particular, those materials that possess a low
oxidation resistance.  The method to be used involves the use of a
nitrogen ion beam or a mixed nitrogen/inert gas ion beam (i.e.  Ar
gas) to remove the resist.

      A nitrogen ion beam or nitrogen/inert gas ion beam can be
solely used for removal or resist or the nitrogen or nitrogen/ inert
gas ion beam can be used to both remove resist and pattern a metal
film simultaneously, thus combining the two-step metal etch and
resist removal process into one step.  The commonly used oxygen
plasma step (ashing) is found to degrade the properties (such as
resistivity) of low oxygen resistant metals (e.g., copper). This
oxygen incorporation will increase both the resistivity of the metal
and increase the contact resistance between this metal layer and any
other metal layer deposited on it.

      This method offers the advantage that in low oxidation
resistant metals, the standard oxygen plasma stripping step can be
replaced by a non-oxidizing nitrogen plasma and/or nitrogen ion beams
stripping step.  It also offers the advantage of combining a two-step
metal patterning and resist removal process into a one-step pattern
and resist removal step.

      Disclosed anonymously.