Browse Prior Art Database

Tungsten Silicide Etching On Ame 5000

IP.com Disclosure Number: IPCOM000103263D
Original Publication Date: 1990-Sep-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 29K

Publishing Venue

IBM

Related People

Duncan, BF: AUTHOR [+2]

Abstract

This disclosure relates to a process for etching a conductive material used in semiconductor integrated circuits on an AME 5000 reactor (available from Applied Materials Equipment Corporation located in Santa Clara, California).

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Tungsten Silicide Etching On Ame 5000

      This disclosure relates to a process for etching a conductive
material used in semiconductor integrated circuits on an AME 5000
reactor (available from Applied Materials Equipment Corporation
located in Santa Clara, California).

      A tungsten silicide (WSix) etching method is shown which
provides superior results over current batch etching methods.
Advantages of the method include a high degree of selectivity,
stalagmite elimination, good vertical profile control and no residue.
Lower pressure, a high degree of temperature control and good
chemistry balance account for the superior etching results of this
process. ( > 1.5:1 WSix Polysilicon)

      The process description is as follows:

      TYPICAL          RANGE
        Cl2 flow          40 sccm         20 - 100 sccm
        Cl flow           10 sccm          0 -  70 sccm
        BCl3 flow          5 sccm          0 -  30 sccm
        Power            200 watts       100 - 500 watts
        Pressure          10 mm            5 -  10 mm
        B Field           40 gauss         0 - 100 gauss
        He Cooling         8 torr          3 -   8 torr
        Cathode temp.     65 deg. C       30 -  85 deg. C

      Disclosed anonymously.