Browse Prior Art Database

Via/Trench Filling And Planarization of Copper

IP.com Disclosure Number: IPCOM000103320D
Original Publication Date: 1990-Sep-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 30K

Publishing Venue

IBM

Related People

Andreshak, JC: AUTHOR [+3]

Abstract

Disclosed is a process for filling interlayer vias and trenches with copper and layered metallurgies including copper, and planarizing copper and copper including layered metallurgies, deposited for integrated circuit or package interconnect structures.

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Via/Trench Filling And Planarization of Copper

      Disclosed is a process for filling interlayer vias and trenches
with copper and layered metallurgies including copper, and
planarizing copper and copper including layered metallurgies,
deposited for integrated circuit or package interconnect structures.

      Following the deposition of a copper film or a layered
metallurgy including copper (e.g., copper deposited over a refractory
barrier metal) by standard techniques, over existing nonplanar
features, the copper layer is melted momentarily by a short laser
pulse.  If a sandwich structure has been deposited, not all of the
layers may be melted. While molten, or nearly so, the high surface
tension of the metal(s), given its relatively low viscosity drives
the metal to rapidly seek a planar surface.

      Vias and trenches previously fabricated in the underlying layer
are completely filled by this process, a planar metal surface is
produced, and the integrity of underlying metal layers in sandwich
structures may be maintained.

      Disclosed anonymously.