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Browse Prior Art Database

Anisotropic Nf3 Reactive Ion Etching

IP.com Disclosure Number: IPCOM000103419D
Original Publication Date: 1990-Nov-01
Included in the Prior Art Database: 2005-Mar-17
Document File: 1 page(s) / 30K

Publishing Venue

IBM

Related People

Armacost, M: AUTHOR [+5]

Abstract

By using etching process parameters held within a defined range, anisotropic etching of several different materials at equal rates is achieved. The defined parameter space is useful in reactive ion etching (RIE) and reactive ion etching tools with magnetic field enhancement (RIE/MIE) and applicable in batch (hexode) and single wafer systems.

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Anisotropic Nf3 Reactive Ion Etching

      By using etching process parameters held within a defined
range, anisotropic etching of several different materials at equal
rates is achieved.  The defined parameter space is useful in reactive
ion etching (RIE) and reactive ion etching tools with magnetic field
enhancement (RIE/MIE) and applicable in batch (hexode) and single
wafer systems.

      Positive photo resist, silicon dioxide (SiO2), silicon nitride
(Si3N4), and silicon (Si) are etched anisotropically and at equal
rates when the following parameters are kept within the following
specified ranges in RIE or RIE/MIE systems:

      SINGLE WAFER        BATCH
                               SYSTEM              SYSTEM Power
density (watts/cm2)        1-2              0.4-0.6 NF3 flow (sccm)
5-15             30-80 NF3/argon (Ar) flow (approx.)    1:2
1:1 System pressure (mTorr)          15-200           10-20

      Degradation of anisotropy of etching or unequal etch rate of
materials caused by varied loading is minimized by adjustment of
magnetic field and/or system pressure within the specified range.

      Disclosed anonymously.