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Schottky Collector Bipolar Transistor

IP.com Disclosure Number: IPCOM000103489D
Original Publication Date: 1990-Dec-01
Included in the Prior Art Database: 2005-Mar-18
Document File: 1 page(s) / 33K

Publishing Venue

IBM

Related People

Akbar, S: AUTHOR [+3]

Abstract

The performance of a bipolar transistor can be improved by operating in saturation with no increase in turn-off delay due to the minority carrier back-injection from the collector into the base. A Schottky collector bipolar transistor, in which the collector-base junction is a metal-semiconductor Schottky barrier diode, can have negligible minority carrier charge storage in the collector and nearly zero collector series resistance. Thus, it can be used in low power circuits with fairly high performance and high circuit integration density.

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Schottky Collector Bipolar Transistor

      The performance of a bipolar transistor can be improved by
operating in saturation with no increase in turn-off delay due to the
minority carrier back-injection from the collector into the base.  A
Schottky collector bipolar transistor, in which the collector-base
junction is a metal-semiconductor Schottky barrier diode, can have
negligible minority carrier charge storage in the collector and
nearly zero collector series resistance.  Thus, it can be used in low
power circuits with fairly high performance and high circuit
integration density.

      Although inverted, collector-up transistors with metal
collectors have been attempted previously, this disclosure describes
a novel way of implementing the Schottky collector concept in a
normal configuration by means of epitaxial metal silicides imbedded
in the silicon, as shown in the figure below.  Cobalt Disilicide and
Nickel Disilicide, for example, have a good lattice match to silicon
to allow epitaxial growth of a silicon base and emitter on top.

      Disclosed anonymously.