Browse Prior Art Database

Ion Beam Surface Treatment for Mercury Wetting

IP.com Disclosure Number: IPCOM000103511D
Original Publication Date: 1990-Dec-01
Included in the Prior Art Database: 2005-Mar-18
Document File: 1 page(s) / 31K

Publishing Venue

IBM

Related People

Harper, JME: AUTHOR

Abstract

In microelectronic packaging, as for example Josephson device packaging, mercury (Hg) connections are often used to contact Pt pins. The Hg has to wet the pins and not flow into the materials that it is used to contact in order to prevent any deterioration of their properties. In this method, Hg is used to contact materials such as Pt and Nb without the need for an interface layer between the Hg and Pt.

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Ion Beam Surface Treatment for Mercury Wetting

      In microelectronic packaging, as for example Josephson device
packaging, mercury (Hg) connections are often used to contact Pt
pins.  The Hg has to wet the pins and not flow into the materials
that it is used to contact in order to prevent any deterioration of
their properties.  In this method, Hg is used to contact materials
such as Pt and Nb without the need for an interface layer between the
Hg and Pt.

      The metal surface (for example, Pt) to be contacted by the Hg
is bombarded with an ion beam of Hg ions.  The ion energy and dose is
chosen so that the Pt surface is cleaned by sputtering, while
simultaneously the Hg penetrates the Pt surface to form a shallow
surface layer of graded Hg-Pt composition.  The ion energy is then
decreased during bombardment to allow accumulation of Hg on the
underlying clean surface.  This provides an easily wetted surface.

      An ion energy of approximately 500 eV will sputter Pt metal.
Energies greater than 1000 eV can be used to implant the Hg deeper
and change the depth of the graded composition layer.

      Disclosed anonymously.