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Browse Prior Art Database

Process for Clamping Substrates to Cathode Temperature while Reactive Ion Etching

IP.com Disclosure Number: IPCOM000103523D
Original Publication Date: 1990-Dec-01
Included in the Prior Art Database: 2005-Mar-18
Document File: 1 page(s) / 33K

Publishing Venue

IBM

Related People

Lane, R: AUTHOR

Abstract

Disclosed is a process to keep a substrate close to the temperature of the cathode, on which the substrate is mounted while reactive ion etching the substrate, in a reactive ion etching (RIE) machine.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Process for Clamping Substrates to Cathode Temperature while Reactive Ion Etching

      Disclosed is a process to keep a substrate close to the
temperature of the cathode, on which the substrate is mounted while
reactive ion etching the substrate, in a reactive ion etching (RIE)
machine.

      The current practice is to use a thermal grease to couple the
bottom of the substrate to the cathode, while reactive ion etching
the substrate.  Experimentally it has been determined that the
thermal grease does not work efficiently when reactive ion etching at
high power, 1 W/cm2. The high power causes a variation in the
temperature of the samples to be etched.  This temperature variation
causes the etch rate to vary sample to sample.  The etch rate usually
increases as the temperature increases.

      It has been demonstrated that a uniform etch rate can be
achieved when the samples are coupled to the cathode with a
double-sided tape.  The two tapes that have been tested are
double-sided masking tape and a tape made from one-mil-thick du
Pont's Kapton with a silicon adhesive on both sides.  The etch rate
uniformity from sample to sample has been demonstrated for etching a
hundred samples at one time.

      Disclosed anonymously.