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Etch Stop for Polymer Machining with an Argon Ion Laser

IP.com Disclosure Number: IPCOM000103660D
Original Publication Date: 1993-Jan-01
Included in the Prior Art Database: 2005-Mar-18
Document File: 1 page(s) / 32K

Publishing Venue

IBM

Related People

Donelon, JJ: AUTHOR [+3]

Abstract

Disclosed is a method of trench making in polyimide to a specific, repeatable depth with an argon ion laser. This is a method of circuit patterning polyimide that can be followed by a suitable form of metallurgy application.

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Etch Stop for Polymer Machining with an Argon Ion Laser

       Disclosed is a method of trench making in polyimide to a
specific, repeatable depth with an argon ion laser.  This is a method
of circuit patterning polyimide that can be followed by a suitable
form of metallurgy application.

      A method of using an argon ion laser to micromachine polyimide
material is taught in [*].  This article discloses that the addition
of a thin (on the order of 1000 o) SiO2 film imbedded in the polymer
film at the depth that we wish the etching to cease will act as an
etch stop for this process.  Deposition by downstream microwave
technique CVD or sputtering are two of the possible SiO2 deposition
techniques.

      When the polymer has been etched to the SiO2 layer, no further
etching occurs.  The power window of the laser must be chosen to be
high enough to machine the polymer and below the damage threshold of
the SiO2 .

      It has been shown that an SiO2 layer over polyimide film is not
damaged at laser power levels higher than needed to etch the
polyimide in KOH solutions.

      Reference
[*]  P. A. Moskowitz, D. R. Vigliotti and R. J. von Gutfeld, Laser
Micromachining of Polyimide Materials, Polyimides, Vol. 1, 365, K. L.
Mittal, Ed., Plenum Pub. Corp. (1984).