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Browse Prior Art Database

Technique to Manufacture High Performance Halo Type PMOS Device

IP.com Disclosure Number: IPCOM000103719D
Original Publication Date: 1993-Jan-01
Included in the Prior Art Database: 2005-Mar-18
Document File: 3 page(s) / 88K

Publishing Venue

IBM

Related People

Acovic, A: AUTHOR [+3]

Abstract

A simple technique is described to form a halo-type PMOS device with shallow junctions for high performance operation. A method is also presented for contacting these shallow junctions.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 52% of the total text.

Technique to Manufacture High Performance Halo Type PMOS Device

       A simple technique is described to form a halo-type PMOS
device with shallow junctions for high performance operation.  A
method is also presented for contacting these shallow junctions.

      To improve threshold voltage roll-off of the PMOS device with
decreased channel length, the n-well doping concentration has to be
raised.  This increases the source and drain junction capacitance and
lowers the device current drive.  This high capacitance and lower
current results in reduction of circuit speed, cancelling partially
the beneficial effects of channel shortening.  This problem is even
more pronounced if an n+ poly gate is used for both the NMOS and PMOS
devices in a CMOS technology for the purpose of process
simplification.  The resulting buried channel PMOS device requires
very high well concentration for its proper operation, resulting in
further degradation in its performance.  By increasing the substrate
doping in the source and drain regions near the channel while keeping
it as low as possible in the channel region, we can improve the
short-channel behavior of the PMOS device without significantly
increasing its drain junction capacitance and current capability.

      In this article a simple technique to manufacture a halo-type
PMOS device is described.  The n-type halo is formed by As
implantation while the shallow portion of the source/drain junctions
(junction extension) are formed by out-diffusing Boron from
Boron-doped oxide, e.g., BSG.  The process of forming these junctions
an...