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Carbon Barrier Layer Between A1 and PtSi for Device Application

IP.com Disclosure Number: IPCOM000103795D
Original Publication Date: 1993-Jan-01
Included in the Prior Art Database: 2005-Mar-18
Document File: 1 page(s) / 36K

Publishing Venue

IBM

Related People

Chang, C: AUTHOR

Abstract

For Si integrated circuit technology, silicides have been commonly used as interconnects and contacts. The reaction between silicides and Al conduction lines has been a primary concern in the fabrication and performance of the circuits built. Various barrier layers have been reported to reduce the Al reaction with the different silicides. Here we describe the use of an amorphous carbon layer as a barrier between Al and PtSi, the latter being commonly used for the bipolar devices. Using a structure of Al/C/Pt/Si, with the layer thicknesses being 2000 o, 1000 o, and 1000 o, respectively, for Al, C and Pt, the structures have been heated to 600oC for 30 min in an ambient of N2-H2 (9:1). Both x-ray diffraction and Rutherford backscattering spectrometric measurements showed little reaction between Al and the PtSi layer formed.

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Carbon Barrier Layer Between A1 and PtSi for Device Application

      For Si integrated circuit technology, silicides have been
commonly used as interconnects and contacts.  The reaction between
silicides and Al conduction lines has been a primary concern in the
fabrication and performance of the circuits built.  Various barrier
layers have been reported to reduce the Al reaction with the
different silicides.  Here we describe the use of an amorphous carbon
layer as a barrier between Al and PtSi, the latter being commonly
used for the bipolar devices.  Using a structure of Al/C/Pt/Si, with
the layer thicknesses being 2000 o, 1000 o, and 1000 o, respectively,
for Al, C and Pt, the structures have been heated to 600oC for 30 min
in an ambient of N2-H2 (9:1).  Both x-ray diffraction and Rutherford
backscattering spectrometric measurements showed little reaction
between Al and the PtSi layer formed.  This is in contrast to the
reactions between Al and PtSi around 450o-550oC for a number of other
barrier materials.

      Disclosed anonymously.