Browse Prior Art Database

Method of Manufacture of Micromechanical Devices using Epitaxial Lateral Overgrowth

IP.com Disclosure Number: IPCOM000103815D
Original Publication Date: 1993-Feb-01
Included in the Prior Art Database: 2005-Mar-18
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Related People

Hodgson, RT: AUTHOR [+2]

Abstract

Disclosed is a technique for constructing Micromechanical devices using fewer lithography steps to make the hub of rotating devices.

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Method of Manufacture of Micromechanical Devices using Epitaxial Lateral Overgrowth

      Disclosed  is  a  technique for constructing Micromechanical
devices using fewer lithography steps to  make  the  hub  of rotating
devices.

      Miniature  pumps, motors, valves etc. can be made using
lithographic technology developed for semiconductor technology.

      The  following  process  steps  can  be  used to make a "wheel"
anchored to a substrate, but free it to rotate  around an axis.

1.  Oxidize or grow an oxide layer on a silicon wafer

2.  Spin on photoresist, expose, develop, and etch oxide leaving an
    oxide dot 1 on the silicon wafer 2.  Strip photoresist to give
    part sketched in Fig. 1.

3.  Grow a crystalline silicon layer 3 up from substrate and over the
    oxide dot 1 by epitaxial lateral overgrowth (ELO) techniques as
    sketched in Fig 2.

4.  Oxidize silicon to "round off" corners 4.  Etch oxide dot 1 away
    to give the structure sketched in Fig. 3.

5.  Oxidize silicon, or grow uniform oxide layer 5 on the silicon
    surface, then grow a uniform polysilicon layer 6 to give the
    structure of Fig. 4.

6.  Define structure 7 in the polysilicon by normal lithographic and
    etching techniques as sketched in Fig.5.

7.  Etch out oxide to free the polysilicon part 7 from the silicon
    substrate.  The part 7 shown in Fig. 6 is now free to rotate, but
    connected to the substrate.