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Passivation of Group IV Semiconductor Surfaces Under Silicon Dioxide Using Group V Elements

IP.com Disclosure Number: IPCOM000104036D
Original Publication Date: 1993-Feb-01
Included in the Prior Art Database: 2005-Mar-18
Document File: 1 page(s) / 20K

Publishing Venue

IBM

Related People

Batey, J: AUTHOR [+3]

Abstract

Monolayers of group V elements, e.g., P, As, Sb, form strong, saturated bonds to group IV semiconductor surfaces, e.g., Si, Ge, which result in electronically and chemically passivated surfaces. These surfaces are more stable than those conventionally passivated with hydrogen. In fact Ge is not easily passivated by hydrogen; and > 3 eV e-beams and temperatures above 550ºC break the passivating H-Si bond. Therefore, we make better MOS capacitors and FETs using Si or Ge and silicon dioxide by replacing the hydrogen passivation with a monolayer of P,As, or Sb between the Si, or Ge and a 250ºC-350ºC plasma enhanced chemical vapor deposited silicon dioxide insulator.

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Passivation of Group IV Semiconductor Surfaces Under Silicon Dioxide Using Group V Elements

      Monolayers of group V elements, e.g., P, As, Sb, form strong,
saturated bonds to group IV semiconductor surfaces, e.g., Si, Ge,
which result in electronically and chemically passivated surfaces.
These surfaces are more stable than those conventionally passivated
with hydrogen.  In fact Ge is not easily passivated by hydrogen; and
> 3 eV e-beams and temperatures above 550ºC break the passivating
H-Si bond.  Therefore, we make better MOS capacitors and FETs using
Si or Ge and silicon dioxide by replacing the hydrogen passivation
with a monolayer of P,As, or Sb between the Si, or Ge and a
250ºC-350ºC plasma enhanced chemical vapor deposited silicon
dioxide insulator.

Disclosed Anonymously.