Browse Prior Art Database

Borderless Diffusion Contact Studs

IP.com Disclosure Number: IPCOM000104097D
Original Publication Date: 1993-Mar-01
Included in the Prior Art Database: 2005-Mar-18
Document File: 2 page(s) / 49K

Publishing Venue

IBM

Related People

Ng, H: AUTHOR [+4]

Abstract

Disclosed is a new process technology that produces borderless diffusion contact studs without having to form diffusion contact windows in a separate step.

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Borderless Diffusion Contact Studs

      Disclosed is a new process technology that produces borderless
diffusion contact studs  without  having to form diffusion contact
windows in a separate step.

      The process begins following the formation of the  gate wiring
and silicided junctions as shown in step A.  CVD W or WSi2 is
deposited and planarized to the top of  the gate  stack, as shown in
step B.  Another layer of W or WSi2 is deposited  to  a  thickness
of  approximately  2000A  to provide  required  additional  stud
height.  This is shown in step C. Blockout diffusion contact resist
imaging is defined using standard photolithographic techniques.  The
diffusion contact  level  is  transferred  into  the  W  or WSi2
layer stopping  on  the  underlying  SiN,   SiO2   and   silicided
junctions.  The  structure  to  this point in the process is shown in
step D. The resist is stripped,  resulting  in  the structure shown
in step E. CVD oxide or PSG is deposited and and planarized back to
the studs as shown in step F.

The  advantages  of  this  process  over  prior  art  are as follows:

1.  The diffusion contact studs are borderless to  both  the gate
    electrode and diffusion regions.

2.  The diffusion contact studs are formed without having to form
    contact windows, thereby saving process time.