Browse Prior Art Database

Planar Processes for Nanostructure Fabrication

IP.com Disclosure Number: IPCOM000104335D
Original Publication Date: 1993-Apr-01
Included in the Prior Art Database: 2005-Mar-19
Document File: 2 page(s) / 39K

Publishing Venue

IBM

Related People

Kaufman, F: AUTHOR

Abstract

Disclosed is a set of planarization processes for defining films less than 10 nm thick as active or passive devices sandwiched between two contacts.

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Planar Processes for Nanostructure Fabrication

      Disclosed is a set of planarization processes for defining
films less than 10 nm thick as active or passive devices sandwiched
between two contacts.

      Referring to the figure, it is seen that all three approaches
involve definition of the bottom metal (M) contact using the
Damascene patterning process.  The recess depth of the bottom
electrode is equivalent to or greater than the final thin film
thickness depending on use of I. metal chem.  mech polish with or
without (II) stop layer trim.  In approach III, micromilling gives a
completely planar surface.  The ultrathin films are defined
postdeposition by chem.  mech polishing or micromilling in I, but
selective CVD in II and III.  The top contact metallurgy is
subsequently defined using a full or stud Damascene stud process.

      Using appropriate semiconductors in place of the metals, these
schemes would also be workable with chem.  mech polish processes
evolved from current deep and shallow trench isolation procedures.