Browse Prior Art Database

Epitaxial Base Lateral Bipolar Transistor on Silicon On Insulator

IP.com Disclosure Number: IPCOM000104338D
Original Publication Date: 1993-Apr-01
Included in the Prior Art Database: 2005-Mar-19
Document File: 2 page(s) / 113K

Publishing Venue

IBM

Related People

Davari, B: AUTHOR [+5]

Abstract

Disclosed is the structure of a lateral bipolar transistor which has virtually no parasitic capacitance, and has an epitaxial base which can be either Si or SiGe. This structure potentially has the highest performance of any bipolar device.

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Epitaxial Base Lateral Bipolar Transistor on Silicon On Insulator

      Disclosed  is  the structure of a lateral bipolar transistor
which has virtually no parasitic  capacitance,  and  has  an
epitaxial  base  which  can  be  either  Si  or  SiGe.  This
structure potentially has the  highest  performance  of  any bipolar
device.

      A lateral bipolar device on SOI with poly-silicon emitter has
been disclosed in the prior art.  To further  improve  the device, an
epitaxial base which allows engineering of base profile while
preserving  all  the  good properties  of  lateral  bipolar on SOI,
is introduced.  The structure is presented in Fig. 1a  (top  view)
Fig. 1b  (Cross section  along  base  poly).  It is noticed that
collector is single crystal SOI, base is an epitaxial layer (Si or
SiGe), while  emitter  is  poly  or  single  crystal silicon.  The
presence of the oxide between base and collector reduces the C-B
capacitance.  The silicide on top of all the surfaces, reduces the
resistances.  This structure probably represents the ultimate in
bipolar structure in terms of low  parasitic capacitances, low-base
resistance and possibility of base profile engineering.

      Fabrication sequence is similar to the prior art, except that
the base is not formed by ion implantation.  After the SOI etch, and
before the deposition  of  the  poly emitter,  either  epitaxial  p
type Si or SiGe is deposited everywhere...