Browse Prior Art Database

III-V Based Magnetic Semiconductor Heterojunction for Magneto-Optical Recording Material

IP.com Disclosure Number: IPCOM000104351D
Original Publication Date: 1993-Apr-01
Included in the Prior Art Database: 2005-Mar-19
Document File: 2 page(s) / 54K

Publishing Venue

IBM

Related People

Chang, L: AUTHOR [+5]

Abstract

Disclosed is an artificially created multilayer material and its fabrication method for near-infrared and visible wavelength magneto-optical recording media. The media consists of novel III-V based magnetic semiconductor (III-V MS) single crystal films and wide gap semiconductor heterostructures placed on conventional semiconductor wafers of Si, GaAs, InP, and GaSb(100).

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 64% of the total text.

III-V Based Magnetic Semiconductor Heterojunction for Magneto-Optical Recording Material

      Disclosed is an artificially created multilayer material and
its fabrication method for near-infrared  and  visible wavelength
magneto-optical  recording  media.  The  media consists  of novel
III-V based magnetic semiconductor (III-V MS)  single  crystal  films
and  wide   gap   semiconductor heterostructures placed on
conventional semiconductor wafers of Si, GaAs, InP, and GaSb(100).

      The  multilayer  structure  is composed of at least one pair of
a III-V MS layer and  a  wide  gap  III-V  or  II-VI semiconductor
(WGS)  layer,  and  is prepared by means of a heteroepitaxial
technique such as molecular beam epitaxy  on semiconductor  wafers.
The III-V MS layer is ferromagnetic, such as InMnAs.  By itself, it
has only a small magneto-Kerr effect  for  wavelengths  shorter than
the value of its band gap.  The band gap of the WGS is larger  than
that  of  the III-V  MS.  The  thickness  of  the III-V MS layer is
thin (5-100nm) enough to allow the incident  polarized  light  to
penetrate  through  the III-V MS.  The light passing through the
III-V MS layer is reflected backward at the III-V  MS  / WGS
interface, giving rise to multi-reflection of the light in the III-V
MS layer.  This results in an increase in effective optical thickness
for the Kerr effect to take place, thus an enhanced magneto-Kerr
effect in the  sp...