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Browse Prior Art Database

Processes for Making Complete Two Mask Thin Film Transistors with the Dual-Tone Photoresist Processing Method

IP.com Disclosure Number: IPCOM000104457D
Original Publication Date: 1993-Apr-01
Included in the Prior Art Database: 2005-Mar-19
Document File: 2 page(s) / 50K

Publishing Venue

IBM

Related People

Kuo, Y: AUTHOR

Abstract

Disclosed are thin film transistor (TFT) structures that can be manufactured with two masking steps (including a dual-tone photoresist process).

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 100% of the total text.

Processes for Making Complete Two Mask Thin Film Transistors with the Dual-Tone Photoresist Processing Method

      Disclosed are thin film transistor (TFT) structures that can be
manufactured with two masking steps (including a dual-tone
photoresist process).

      Fig. 1 shows the structure of one of the simplest inverted,
staggered thin film transistors.  To manufacture this kind of
transistor, at least three masks normally are required; one for the
gate (GATE mask); one for the gate dielectric and semiconductor
island (ISLAND mask); one for the N+ and source/drain metal (DATA
mask).  With a dual-tone photoresist processing method, the ISLAND
and DATA masks can be combined into one mask.  Fig. 2 shows the
process flow.  For a normal staggered TFT, a similar method can be
used, for example, combining the GATE and ISLAND masks into one.
Fig. 3 shows the process flow.

Reference

U.S.  Patent 4,767,723; W. D. Hinsberg, S. A. MacDonald, L. A.
Pederson and C. G. Wilson, on SPIE Advances in Resist Technology and
Processing V, off 920(2), 2 (1988); Y. Kuo, on SPIE Display System
Optics II, 1117, off 114 (1989).