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Polyacrylonitrile as a High Temperature Dye for Use as an Anti- Reflectivity Coat

IP.com Disclosure Number: IPCOM000104533D
Original Publication Date: 1993-Apr-01
Included in the Prior Art Database: 2005-Mar-19
Document File: 1 page(s) / 49K

Publishing Venue

IBM

Related People

Angelopoulos, M: AUTHOR [+4]

Abstract

Disclosed is a material and method that can be utilized to eliminate reflected and specularly scattered light from underlying surfaces in optical lithographic processes. This invention teaches the use of polyacrylonitrile as such material.

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Polyacrylonitrile as a High Temperature Dye for Use as an Anti- Reflectivity Coat

      Disclosed is a material and method that can be utilized to
eliminate reflected and specularly scattered light from underlying
surfaces in optical lithographic processes.  This invention teaches
the use of polyacrylonitrile as such material.

      Reflected or specularly scattered light from underlying
surfaces including silicon and glass ceramic often creates
lithographic problems during the resist patterning process as this
light exposes areas of the resist which should not be exposed.  As a
result, these areas often have residue after develop for negative
working systems or pattern enlargement for positive working systems
which in turn reduce the electrical performance of the final product.
To eliminate this problem, anti-reflectivity coats (ARCs) have
commonly been used below the imaging resist.  These Arcs are highly
absorbing materials at the wavelength of interest for the specific
exposure process.

      Photosensitive polyimides (PSPI) have recently been of great
interest as resist materials.  These systems are usually imaged with
404 nm and 436 nm light and are commonly applied on a
non-photosensitive polyimide layer.  Most underlying polyimides,
however, do not have high absorption at 436 nm and as a result
scattered or reflected light can adversely affect the lithography of
the PSPI.

      Proposed is the use of polyacrylonitrile either alone or in a
ble...