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Browse Prior Art Database

Compact Horizontal Head Structure for Arrays

IP.com Disclosure Number: IPCOM000104676D
Original Publication Date: 1993-May-01
Included in the Prior Art Database: 2005-Mar-19
Document File: 2 page(s) / 52K

Publishing Venue

IBM

Related People

Fan, LS: AUTHOR [+4]

Abstract

Disclosed is a horizontal head structure suitable for array application. Fig. 1 shows the two pairs of horizontal heads. Compared to the ferrite array heads [*], this thin film head offers lithographically defined dimensions and a denser head array.

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This is the abbreviated version, containing approximately 67% of the total text.

Compact Horizontal Head Structure for Arrays

      Disclosed is a horizontal head structure suitable for array
application.  Fig. 1 shows the two pairs of horizontal heads.
Compared to the ferrite array heads [*], this thin film head offers
lithographically defined dimensions and a denser head array.

      The cross-section of the structure is shown in Fig. 2..  One
way to build this head structure is described below.  Deep and
shallow wells are etched into the slider substrate material.  The
walls of the wells are of finite slope, such as the <111> plane of
the (100) silicon wafer.  Sloped walls can be etched into a
crystalline semiconductor substrate, such as silicon, using a
preferential etch technique.  The preferential etch gives a 57º
wall when the substrate material is a <100> silicon wafer.  Helical
coils and part of the yoke are fabricated in the deep well.  The yoke
extends from the deep well into the shallow well and the pole tip
extends partially above the ABS.  The width of the gap (track width)
is defined lithographically and is placed in the shallow well.  The
excessive height of the pole tip is polished away at the end of the
process.  Thus, the tips are exposed.  Since the pole tips are near
the edge of the well, chemical-mechanical polish does not cause
recession of the pole tips.  The pole tip thickness is the remaining
thickness of the yoke in the shallow well, and can be controlled by
the etch depth of the shallow well (similar 0....