Browse Prior Art Database

Micro-Power Controller for Fault-Tolerant VLSI Space Processors

IP.com Disclosure Number: IPCOM000105051D
Original Publication Date: 1993-Jun-01
Included in the Prior Art Database: 2005-Mar-19
Document File: 2 page(s) / 47K

Publishing Venue

IBM

Related People

Shin, CH: AUTHOR [+2]

Abstract

A method for controlling power for a VLSI loads a very fine level is disclosed. This invention includes an oscillator, diode-capacitor voltage inverter, P-channel MOSFET, and enable circuit.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 75% of the total text.

Micro-Power Controller for Fault-Tolerant VLSI Space Processors

      A method for controlling power for a VLSI loads a very fine
level is disclosed.  This invention includes an oscillator,
diode-capacitor voltage inverter, P-channel MOSFET, and enable
circuit.

      The disclosed circuit contains a minimum amount of circuitry
that can be packaged in a small hybrid that can be placed any place
where power control at a fine level is required.  This circuit can be
constructed with components suitable for the space environment, and
the probability of fault propagation is minimized.

      The P-channel MOSFET Q1 is used as a switch to turn power on
and off to the VLSI load.  NAND gates U1A and U1B in conjunction with
R1, R2, and C1 form an astable multivibrator or oscillator.  U1C is
used to disable the oscillator, and U1D is used to turn off the
MOSFET.  CMOS technology is preferred for the gates because of the
large output swing.  All of the gates can be obtained from a single
standard 54HC00 quad dual-input NAND gate.

      With the enable line in the low state, the output of U1B NAND
gate is a square wave.  When the output of the oscillator is high,
capacitor C2 is charged to 5V (Vcc) through the Schottky diode D1
since the output of gate U1D is low.  When the output of the
oscillator is low, the MOSFET gate is charged to approximately 5V
below ground through the capacitor C2 and the Schottky diode D2.
Since the MOSFET source connection is at 5V,...