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Oxygen and Water Plasma Anodization of Actively Cooled Substrates Using Radio Frequency Induction

IP.com Disclosure Number: IPCOM000105449D
Original Publication Date: 1993-Aug-01
Included in the Prior Art Database: 2005-Mar-19
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR [+4]

Abstract

A method is disclosed for plasma anodizing materials at or near room temperature. Radio frequency induction [*] is used to generate an intense plasma from either water vapor or oxygen gas. Silicon wafers are then placed in this highly dissociated, high ion density plasma and a positive anodizing potential is placed on the substrate. Oxygen radicals and ions from the plasma then form a SiO sub 2 layer on the wafer. The positive anodizing potential produces an electric field across the newly formed oxide and allows active species to reach the silicon-oxide interface such that the reaction continues.

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Oxygen and Water Plasma Anodization of Actively Cooled Substrates Using Radio Frequency Induction

      A method is disclosed for plasma anodizing materials at or near
room temperature.  Radio frequency induction [*] is used to generate
an intense plasma from either water vapor or oxygen gas.  Silicon
wafers are then placed in this highly dissociated, high ion density
plasma and a positive anodizing potential is placed on the substrate.
Oxygen radicals and ions from the plasma then form a SiO sub 2  layer
on the wafer.  The positive anodizing potential produces an electric
field across the newly formed oxide and allows active species to
reach the silicon-oxide interface such that the reaction continues.

      The substrates are actively cooled by attachment to a
water-cooled substrate holder using a electrically conductive
graphite suspended in alcohol.  Without cooling the substrate will
typically attain a temperature of 150-300 C due to heating by the
plasma which may induce damage.  Plasma anodization in low-density
plasmas typically requires these elevated temperatures, but due to
the high density induction plasma, oxidation may proceed at or below
room temperature (10-20 C).  Low temperature oxidation also impacts
temperature sensitive substrates, such as III-V compounds.

      The oxide thin films grown on silicon exhibit indices of
refraction of 1.46-1.48, which are equivalent to thermally grown SiO
sub 2 .  Electrical characterization of Al-oxi...