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Plasma-Induced Polymerization of Lubricating Films on Thin-Film Magnetic Recording

IP.com Disclosure Number: IPCOM000105664D
Original Publication Date: 1993-Aug-01
Included in the Prior Art Database: 2005-Mar-20
Document File: 2 page(s) / 61K

Publishing Venue

IBM

Related People

Crowder, MS: AUTHOR [+2]

Abstract

Disclosed is an in-vacuo method to deposit a lubricating film onto a thin-film magnetic recording disk (TFD). The deposition technique involves the use of plasma source to induce polymerization of a lubricating film on the surface of a TFD. Since this process is performed in vacuum, all solvents currently used in the lubrication of TFDs are eliminated.

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Plasma-Induced Polymerization of Lubricating Films on Thin-Film Magnetic Recording

      Disclosed is an in-vacuo method to deposit a lubricating
film onto a thin-film magnetic recording disk (TFD).  The
deposition technique involves the use of plasma source to induce
polymerization of a lubricating film on the surface of a TFD.  Since
this process is performed in vacuum, all solvents currently used
in the lubrication of TFDs are eliminated.

      A TFD is placed in a vacuum chamber (10 sup -3 to 10 sup -4
Torr) at a distance of about 10 cm from a plasma source.  Plasma
sources utilized include: a) an electron cyclotron resonance
source operated at 2.45 GHz, b) an RF source operated at 13.56 MHz,
and c) an RF source operated at 50 KHz.  In each case, Ar was used
to sustain the discharge, but other reactive as well as
non-reactive gases could be used.  Simultaneous with plasma
formation, a lubricant precursor is introduced to the vacuum chamber
and allowed to flow  across the  surface of the disk.  Interaction of
the precursor with Ar ions of positive polarity formed in the plasma
source results in the polymerization of the  precursor on the TFD.

Increasing the flux of ions impinging on the TFD surface, or
alternatively increasing the flux of precursor to the surface,
increases the deposition rate of the polymer film on the TFD.
Convenient methods of increasing the ion flux at the surface include:
a) increasing the discharge power (either RF or microwave), b)
increasing Ar flow into plasma reactor, and c) electrically biasing
the disk with a negative potential.  Since d...