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Selective Dry Etch of Si3N4 Film Employing a Magnetron Dry Etch System

IP.com Disclosure Number: IPCOM000105715D
Original Publication Date: 1993-Sep-01
Included in the Prior Art Database: 2005-Mar-20
Document File: 2 page(s) / 32K

Publishing Venue

IBM

Related People

Takeichi, M: AUTHOR

Abstract

Disclosed is a dry etching technique having a high selectivity for Si[3]N[4] film but not significantly etching SiO[2], Si and photoresist in magnetron dry etch system. The following is an etching condition to achieve sufficient selectivity for Si[3]N[4] to SiO[2], Si and photo resist and uniform etching rate all over a substrate:

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Selective Dry Etch of Si3N4 Film Employing a Magnetron Dry Etch System

      Disclosed is a dry etching technique having a high selectivity
for Si[3]N[4]  film but not significantly etching SiO[2], Si and
photoresist in magnetron dry etch system.  The following is an
etching condition to achieve sufficient selectivity for Si[3]N[4]  to
SiO[2], Si and photo resist and uniform etching rate all over a
substrate:

       1.  Gas flow rate :  CHF[3]  :  20 - 200   SCCM
                             O[2]  :   5 - 100   SCCM
       2.  Radio Frequency Power : 150 - 700   WATTs
       3.  Pressure              :  10 - 100   mTorr
       4.  Magnetic field        : 0.01-  40   Gauss
       5.  Cathode temperature   :   0 -  60   degrees(Celsius)

      The achieved etching characteristics using the condition above
is as follows:

1.Etching rate uniformity all over a substrate is within + 5%

      * Uniformity = (Max-Min)/(2 x Mean) x 100

2.  Selective etching rate
            Ratio of Si[3]N[4]  to SiO[2]
= more than 2.0
            Ratio of Si[3]N[4]  to Si            =
more than 3.0
            Ratio of Si[3]N[4]  to photoresist   =
more than 1.5

       * Measurement was done to the exclusion of 10 mm area
                        from the substrate edge.

      In comparison with...