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Browse Prior Art Database

Universal Reactive Ion Etch Fixture for Device Deprocessing

IP.com Disclosure Number: IPCOM000105774D
Original Publication Date: 1993-Sep-01
Included in the Prior Art Database: 2005-Mar-20
Document File: 2 page(s) / 38K

Publishing Venue

IBM

Related People

Cain, JF: AUTHOR [+7]

Abstract

Disclosed is a universal fixture which allows the non-destructive depassivation of integrated circuit (IC) devices. This fixture was designed to accommodate a variety of IC module packages processed in a "Technics 800" Reactive Ion Etch (RIE) tool. The primary objective is to deprocess the IC, for electron beam testing, while maintaining functionality of the device. Previous techniques, using standard tools, caused damage to IC circuitry which resulted in test failures.

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This is the abbreviated version, containing approximately 98% of the total text.

Universal Reactive Ion Etch Fixture for Device Deprocessing

      Disclosed is a universal fixture which allows the
non-destructive depassivation of integrated circuit (IC) devices.
This fixture was designed to accommodate a variety of IC module
packages processed in a "Technics 800" Reactive Ion Etch (RIE) tool.
The primary objective is to deprocess the IC, for electron beam
testing, while maintaining functionality of the device.  Previous
techniques, using standard tools, caused damage to IC circuitry which
resulted in test failures.

      The introduction of this fixture not only allows deprocessing
without damage to the IC, but includes the following features:

1.  Accepts most sizes and shapes of IC packages.
2.  Provides thermal dissipation and electrical grounding during
    processing.
3.  Uniform planerization of the device, with respect to the RIE
    plasma.
4.  Proximity gas channels that provide uniform gas flow across the
    surface of the device.
5.  Constructed of 402 stainless steel, which prevents formation on
    RIE" grass [*]  on the device surface.

      The introduction of this fixture allows successful deprocessing
of a variety of integrated circuit devices.  Detail of the RIE tool
fixture cross section view is shown in the Figure.

Reference

[*]  "RIE Grass Formation during IC Depassivation," TR 29.1260
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