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A Fully Integrated CMOS And Vacuum Field Emitter Process On Silicon-On-Insulator (SOI)

IP.com Disclosure Number: IPCOM000105879D
Original Publication Date: 1993-Sep-01
Included in the Prior Art Database: 2005-Mar-20
Document File: 4 page(s) / 109K

Publishing Venue

IBM

Related People

Seliskar, J: AUTHOR [+2]

Abstract

In the continuing effort to reduce the weight of satellite avionics, more of the high frequency circuitry needs to be integrated with the processor portions of the system. Although GaAs chips increased their functionality as part of the MMIC program, silicon continues to perform the primary processor function. In addition, because of the cost of integrating the functionality level of silicon onto GaAs, it is unlikely that silicon will be replaced anytime soon in that capacity. For this reason, it may be advantageous to integrate the high frequency portion of the system into the silicon. This can be accomplished through the use of field emitter devices, also know as microelectronic vacuum tubes.

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A Fully Integrated CMOS And Vacuum Field Emitter Process On Silicon-On-Insulator (SOI)

      In the continuing effort to reduce the weight of satellite
avionics, more of the high frequency circuitry needs to be integrated
with the processor portions of the system.  Although GaAs chips
increased their functionality as part of the MMIC program, silicon
continues to perform the primary processor function.  In addition,
because of the  cost of integrating the functionality level of
silicon onto GaAs, it is unlikely that silicon will be replaced
anytime soon in that capacity.  For this reason, it may be
advantageous to integrate the high frequency portion of the system
into the silicon.  This can be accomplished through the use of field
emitter devices, also know as microelectronic vacuum tubes.

      Vacuum microelectronic devices are now commonly fabricated
using semiconductor processing techniques in as little as four mask
steps.  These devices have been routinely fabricated at dimensions as
small as 1um in size.  Arrays of these devices are then used to
achieve the required current density.  As compared with silicon CMOS,
field emitters are extremely insensitive to radiation (total dose,
SEU, etc.)  and temperature variation.  In a theoretical analysis of
a distributed amplifier configuration, they have also been shown to
have a higher gain-bandwidth product than existing GaAs MESFET
devices.  Beyond, integrated high frequency receiver + processor
applications, field emitters also show some promise for use in HDTV
as flat panel displays.  Integration of CMOS with field emitters
enables the fabrication of smart flat panel displays.

      Field emitter devices can be integrated with CMOS by using
commercially available Silicon-on-Insulator (SOI)...