Browse Prior Art Database

Light Emitting Silicon Device

IP.com Disclosure Number: IPCOM000105926D
Original Publication Date: 1993-Sep-01
Included in the Prior Art Database: 2005-Mar-20
Document File: 2 page(s) / 47K

Publishing Venue

IBM

Related People

Hodgson, RT: AUTHOR [+3]

Abstract

Most high band gap semiconductors are either indirect bandgap (III-IV) or it is difficult to make p-n junctions (II-VI). It is difficult then to make injection lasers at the shorter wavelengths. Proposed is a material and a device which could avoid this problem.

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Light Emitting Silicon Device

      Most high band gap semiconductors are either indirect bandgap
(III-IV) or it is difficult to make p-n junctions (II-VI).  It is
difficult then to make injection lasers at the shorter wavelengths.
Proposed is a material and a device which could avoid this problem.

      The recent reports of visible photoluminescense from zero
dimensional silicon (silicon crystallites of dimension 1 nm) are
intriguing both from fundamental physics and from technological
viewpoints.  Disclosed is a method of putting energy into the
siliconclusters in the form of electrons and holes injected from high
band gapsemiconductors into the silicon containing matrix (presumably
SiO&sub2.).  This disclosure proposes to sandwich the luminescent
Si/SiO&sub2.  material 1 between a high band gap n-type material 2,
e.g., ZnSe or GaP, with relatively small electron affinity (<3.6 eV)
and a high band gap p-type material 3, e.g., GaP or AlP, with
relatively large ionizationpotential, (>6.0 eV).  In this way the
difference in energy of the electrons injected from the n- type
material into the Si/SiO&sub2.  and the energy of the holes injected
from the p-type material willbe sufficiently large (>2.5 eV) to pump
the luminescent structure.

      This can be made, for example, if about 100A  silicon is grown
on a p-type AlP or p-type GaPsubstrate.  This silicon is treated by
an anodization process in, e.g., HF and alcohol, or any other
electrochemical soluti...