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Poly Amic Ester Precursors of BPDA-PDA: Planarizing, Low-Thermal-Expansion, Low Stress, Dielectrics for Microelectronic Applications

IP.com Disclosure Number: IPCOM000106105D
Original Publication Date: 1993-Sep-01
Included in the Prior Art Database: 2005-Mar-20
Document File: 2 page(s) / 62K

Publishing Venue

IBM

Related People

Hofer, D: AUTHOR [+3]

Abstract

The importance of aromatic polyimides in the microelectronics industry is well documented and is a direct result of their excellent thermal stability and dieletric properties. The use of low thermal expansion coefficient (TEC) polyimides as interlayer dielectrics for submicron VLSI's[*] has relieved many of the stress induced problems found when the conventional semi-rigid polyimides, such as PMDA-ODA, are used. The advantages of a low TEC material, BPDA-PDA, over the conventionally used PMDA-ODA based polyimides are its higher density, low-thermal-expansion- coefficient (matching that of silicon), tensile strength, and Young's modulus about three times that of conventional PMDA-ODA, high thermal decomposition temperature, slightly lower dielectric constant, and low absorbed moisture content.

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Poly Amic Ester Precursors of BPDA-PDA: Planarizing, Low-Thermal-Expansion, Low Stress, Dielectrics for Microelectronic Applications

      The importance of aromatic polyimides in the microelectronics
industry is well documented and is a direct result of their excellent
thermal stability and dieletric properties.  The use of low thermal
expansion coefficient (TEC) polyimides as interlayer dielectrics for
submicron VLSI's[*] has relieved many of the stress induced problems
found when the conventional semi-rigid polyimides, such as PMDA-ODA,
are used.  The advantages of a low TEC material, BPDA-PDA, over the
conventionally used PMDA-ODA based polyimides are its higher density,
low-thermal-expansion- coefficient (matching that of silicon),
tensile strength, and Young's modulus about three times that of
conventional PMDA-ODA, high thermal decomposition temperature,
slightly lower dielectric constant, and low absorbed moisture
content.  The combination of these properties makes this material
very attractive for chip and chip packaging technologies.  However,
the planarization of these materials has been found to be inadequate
to cover the aggressive topographies found in current and future chip
packages.  The solution described here involves the synthetic
preparationof the polyamic ester precursors of the low thermal
expansion coefficient polyimides and the improved planarization of
their resulting films.  The compination of this with improvements in
the shelf life, and the hi...