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Browse Prior Art Database

Solventless, Self-Developable, Positive-Acting Laser Resist Process

IP.com Disclosure Number: IPCOM000106203D
Original Publication Date: 1993-Oct-01
Included in the Prior Art Database: 2005-Mar-20
Document File: 2 page(s) / 37K

Publishing Venue

IBM

Related People

Baum, TH: AUTHOR [+3]

Abstract

Disclosed is a positive-acting resist process which requires no solvent for coating, developing or stripping the resist.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 99% of the total text.

Solventless, Self-Developable, Positive-Acting Laser Resist Process

      Disclosed is a  positive-acting  resist  process which
requires no solvent for coating, developing or stripping the resist.

      Poly-(1,4-phenyleneazine-di-N-oxide) was deposited  onto
various  substrates  by  heating under vacuum and collecting the
vapor on the cooled substrate.  Exposure of the resultant films to a
focussed laser beam at &lambda.  submax =514  nm resulted in etching
of the polymer.  The process is most likely to be photothermal where
the heat  generated  by the  laser  beam  converts the polymer to
monomer which then volatilizes.  Clean, selective patterns were
rapidly written (up to 750 &mu.M ssup -1) in both thick (several &mu.
M) and thin  films  using  low laser  power.   The line widths were
about 8 &mu.M, the size of the focal spot of the incident  laser
beam.    Also  the lines  showed  no  evidence of debris or "fallout"
often observed in other laser processing techniques, such as laser
ablation.    The imaged polymer can also be removed from the
substrate simply by heating to above 100ºC.   As  the polymer
is deposited by volatilization and also imaged with the laser beam by
volatilization and also can be removed after processing by
volatilization, no solvent is required in the process.

      Using  the  above  process,  a  solventless, recyclable,
self-developable, positive acting laser resist  process  has been
...