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Single Step Annealing with Titanium Nitride Diffusion Barrier for Ti Salicide Process

IP.com Disclosure Number: IPCOM000106212D
Original Publication Date: 1993-Oct-01
Included in the Prior Art Database: 2005-Mar-20
Document File: 2 page(s) / 42K

Publishing Venue

IBM

Related People

Basavaiah, S: AUTHOR [+3]

Abstract

Disclosed here is a titanium salicide process by which lateral diffusion and bridging between the gate and source/drain is prevented, applicable to 0.5um or less dimension CMOS technologies. In addition, this process has the option of eliminating the first (650degreeC-700degreeC) C49 phase TiSi formation furnace or rapid thermal anneal, of which the anneal is now more tolerant to ambient oxygen contamination.

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Single Step Annealing with Titanium Nitride Diffusion Barrier for Ti Salicide Process

      Disclosed here is a titanium salicide process by which lateral
diffusion and bridging between the gate and source/drain is
prevented, applicable to 0.5um or less dimension CMOS technologies.
In addition, this process has the option of eliminating the first
(650degreeC-700degreeC) C49 phase TiSi formation furnace or rapid
thermal anneal, of which the anneal is now more tolerant to ambient
oxygen contamination.

      This process disclosed here is achieved by directional
evaporating or collimate sputtering the thin (10-60nm) Ti used for
silicide formation followed by a thicker (approx.  100nm)
non-collimated reactively sputtered titanium nitride film (Figure).
The Ti will be minimal on the sidewall insulator due to its thinness
and the directional nature of the evaporation or collimated
sputtering, while the thicker sputtered TiN will deposit on that
sidewall.  The TiN serves as a barrier to the lateral diffusion and
bridging between the gate and source/drain, and as a "capping" layer
on the Ti involved in the silicide formation.  This protects the Ti
from ambient oxygen contamination during the anneal.  Because the
bridging is restricted, a single-step higher temperature
(800-925degreeC) C54 phase TiSi2 has the option of being used.  This
will allow for more complete silicide formation on non-ideal doped
silicon or polysilicon regions.  The conventional selective TiN/Ti...