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Use of Tantalum to Control the Soft Magnetic Properties of Permalloy Pole Tip P2 in Inductive Heads

IP.com Disclosure Number: IPCOM000106252D
Original Publication Date: 1993-Oct-01
Included in the Prior Art Database: 2005-Mar-20
Document File: 2 page(s) / 44K

Publishing Venue

IBM

Related People

Baratte, H: AUTHOR [+5]

Abstract

This article describes the use of a Ta layer to control special properties of the pole tip of an inductive head.

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 90% of the total text.

Use of Tantalum to Control the Soft Magnetic Properties of Permalloy Pole Tip P2 in Inductive Heads

      This article describes the use of a Ta layer to control special
properties of the pole tip of an inductive head.

      When the permalloy P2 seed layer is sputtered on hard bake
photoresist after an argon pre-etch removal, resputtered resist
residues contaminate the sputter tool and are incorporated in the
sputtered NiFe.  However, carbon incorporated in the permalloy is
inactive.  Tool contamination is therefore responsible for
irreproducibilities concerning the magnetic properties of the
sputtered seed NiFe.

      The contamination of the tool can be avoided by covering the
hard bake resist isolation layer I5 (as shown in figure) with a 8-10
nm sputtered Tantalum thin metal, etching the Ta in the back gap,
then sputter etching the Ta oxide and sputter etching the NiFe
permalloy over Ta.

  Typical process parameters are as follows:

  In a dual chamber sputter tool, equipped with Ta and NiFe targets:

- Sputter etch (cleaning step)
  - Power:         1.75 kW
  - Pressure:      10 mT Argon
  - DC:            600 V (Target)
  - Time:          14.5 min.

- Pre-clean 2 min.

- Sputter deposition of Ta
  - Power:         1.25 kW
  - Pressure:      11 mT Argon Plasma
  - DC:            self-bias
  - Time:          2.5 min.

- Sputter deposition of NiFe
  - Power:         1.75 kW
 ...