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Triarylsulfonium Salt Photoinitiators with Improved Photosensitivity

IP.com Disclosure Number: IPCOM000106286D
Original Publication Date: 1993-Oct-01
Included in the Prior Art Database: 2005-Mar-20
Document File: 2 page(s) / 68K

Publishing Venue

IBM

Related People

Dektar, JL: AUTHOR [+3]

Abstract

This invention describes new triarylsulfonium salts with improved photosensitivity for crosslinking epoxy resins.

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Triarylsulfonium Salt Photoinitiators with Improved Photosensitivity

      This invention describes new triarylsulfonium salts with
improved photosensitivity for crosslinking epoxy resins.

      Diphenyl-4-phenlthiophenyl-1-naphthalenesulfonium
hexafluoroantimonate (DPTNS.Sb F&sub6.),
diphenyl-4-phenylthiophenyl-1-napththalenesulfonium
hexafluorophospate (DPTNS.PF&sub5.),
diphenyl-9-phenanthrensesulfonium hexafluoroantimonate
(DPS.SbF&sub6.), and 9-anthracenediphenylsulfonium
hexafluoroantimonate (ADS.SbF&sub6.) (Fig. 1) were synthesized by
phenylation of the respective sulfides with diphenylidonium salts.
These salts had absorbances at longer wavelengths than the
traditional triphenylsulfonium salts (TPS.SbF&sub6.) and the
hexafluoroantimonates  of  the commercially  available mixture of the
complex arylsulfonium photoinitiator (ASP.SbF&sub6.).[*]The UV
absorption spectra are shown in Fig. 2.

      Evaluations in an epoxy resin system containing  85  wt% Epirez
SU8  and 15 wt% CY179 and an additional 2 wt% of the photoinitator
were carried out.  The films (typically 2 mils thick) were taken
through a standard process:

1.    lamination to coupons at 70degreeC

2.    exposure of film with a Hg/Xe lamp through a mask

3.    post-exposure bake at 100degreeC for 1 minute

4.    develop with suitable solvent such as 1,1,1-trichloroethane and

5.    air dry and inspect pattern.,

Thus, the lower the dose required to resolve the mask pattern
(photospeed) the better the photoinitator.

      The data in the Table  s...