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Gas Mixture for Plasma Etching

IP.com Disclosure Number: IPCOM000106442D
Original Publication Date: 1993-Nov-01
Included in the Prior Art Database: 2005-Mar-21
Document File: 2 page(s) / 22K

Publishing Venue

IBM

Related People

Roecker, W: AUTHOR [+3]

Abstract

The plasma deposition of organic or organosilicon polymers, such as hexamethyldisilazane (HMDS), leads to undesired polymer being deposited on the walls of the reaction chamber. This undesired polymer has been removed by plasma cleaning, using gas mixtures suchas CF sub 4 and O sub 2 or SF sub 6 and O sub 2

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Gas Mixture for Plasma Etching

      The plasma deposition of organic or organosilicon polymers,
such as hexamethyldisilazane (HMDS), leads to undesired polymer being
deposited on the walls of the reaction chamber.  This undesired
polymer has been removed by plasma cleaning, using gas mixtures
suchas CF sub 4 and O sub 2 or SF sub 6 and O sub 2

      In order to increase the etch rate without the adverse effect
of carbon being deposited on the surface to be etched, a gas mixture
of SF sub 6, O sub 2, N sub 2, and Ar is proposed in this article.
This mixture is fed into the reaction chamber and radio frequency
power of 13.56 MHz is applied.

      Argon as a high-mass sputter gas and nitrogen, which can
combine with the carbon in the organosilicon polymer, increase the
etch rate of the latter to 1100 - 1200 nm/min., which is 10 times
higher than with CF sub 4 and O sub 2.