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Low-Dose SIMOX with a Thin Buried Oxide

IP.com Disclosure Number: IPCOM000106458D
Original Publication Date: 1993-Nov-01
Included in the Prior Art Database: 2005-Mar-21
Document File: 2 page(s) / 50K

Publishing Venue

IBM

Related People

McFarland, PA: AUTHOR [+2]

Abstract

The present SIMOX process practiced commercially consists of an oxygen implantation at 150-200 keV at 600-650ºC to a dose of 1.8 x 10sup(18)cm sup(-2), followed by a two step annealing. The first step typically requires an oxidation at &approx. 1000ºC followed by a very high temperature >= 1300ºC anneal in Ar/O2. gas mixture. This yields a SIMOX structure with &approx. 1800 A Si on top of a BOX of &approx. 3800 A. The same annealing process when applied to lower oxygen dose SIMOX (<= 5 x 10sup(17) cm sup(-2)) typically yields a Si layer of

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Low-Dose SIMOX with a Thin Buried Oxide

      The present SIMOX process practiced commercially consists of an
oxygen implantation at 150-200 keV at 600-650ºC to a dose of 1.8
x 10sup(18)cm sup(-2), followed by a two step annealing.  The first
step typically requires an oxidation at &approx.  1000ºC followed
by a very high temperature >=  1300ºC anneal in Ar/O2.
gas mixture.  This yields a SIMOX structure with &approx.  1800
A  Si on top of a BOX of &approx. 3800 A.  The
same annealing process when applied to lower oxygen dose SIMOX
(<=  5 x 10sup(17) cm sup(-2))  typically yields a Si layer of

2500 - 3000 A  with a BOX thickness of <=  1000A.
However, the BOX is typically discontinuous.

      In the present invention it is shown that a continous thin BOX
under the aforementioned low dose oxygen implant conditions can be
created by optimizing the intermediate oxidation step prior to the
high temperature annealing.  It is believed that interaction of
oxidation induced point defects with the SIMOX structure plays a key
role in determining the final BOX structure.  The as-implanted
microstructure of the low dose SIMOX is quite different compared to
that of the stardard dose SIMOX.  Whereas the low dose SIMOX contains
a band of disconnected SiO sub x and damage clusters, the standard
dose SIMOX consist of a continous SiO sub x layer and complex
distribution of defect clusters on either side of the layer.  The
presence of a continous SiO sub x layer in...