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Browse Prior Art Database

Conformal Deposition of Oxide Compounds from Solid Precursors by ECR Plasma

IP.com Disclosure Number: IPCOM000106561D
Original Publication Date: 1993-Nov-01
Included in the Prior Art Database: 2005-Mar-21
Document File: 2 page(s) / 69K

Publishing Venue

IBM

Related People

Grill, A: AUTHOR [+2]

Abstract

Disclosed is a specially designed ECR plasma system which can be used to deposit oxide compounds such as ferro/paraelectric of high T sub c superconductor materials using metals or metal oxides as precursors. By adjusting the parameters of the ECR plasma and the substrate bias it is possible to deposit conformal coating of such materials, for features having various aspect-ratios. The use of difficult-to-use and/or toxic CVD precursors is avoided by this technique. Stoichiometry of the deposited film can be easily varied through adjustment of the feed to the plasma.

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Conformal Deposition of Oxide Compounds from Solid Precursors by ECR Plasma

      Disclosed is a specially designed ECR plasma system which can
be used to deposit oxide compounds such as ferro/paraelectric of high
T sub c superconductor materials using metals or metal oxides as
precursors.  By adjusting the parameters of the ECR plasma and the
substrate bias it is possible to deposit conformal coating of such
materials, for features having various aspect-ratios.  The use of
difficult-to-use and/or toxic CVD precursors is avoided by this
technique.  Stoichiometry of the deposited film can be easily varied
through adjustment of the feed to the plasma.

      Expansion of DRAMs to higher densities, to 1 Gbit or higher
integration, requires materials of high dielectric constants, in
order to be able to construct sufficiently large capacitors in the
reduced available surface.  VLSI integration will most probably
require conformal deposition of the high dielectric material, as some
vertical structures may be included in the design of the devices.
This requirement would typically imply that the deposition would have
to be performed by some form of CVD technique.

      Ferroelectric of paraelectric materials such as Ba sub x Sr sub
(1-x) TiO sub 3 appear to be among the materials having sufficiently
high dielectric constants as required by 1 Gbit DRAMs.  Precursors
for CVD deposition of such materials are available, however, they are
solid compounds which have to be used at temperatures of about
200degreeC, where they provide vapors at low pressures.  In addition,
they have to be...