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Novel Use of Al2O3 Thin Film as a Barrier Layer in Multi-level Resist Structure

IP.com Disclosure Number: IPCOM000107181D
Original Publication Date: 1992-Jan-01
Included in the Prior Art Database: 2005-Mar-21
Document File: 2 page(s) / 63K

Publishing Venue

IBM

Related People

Fredericks, EC: AUTHOR [+2]

Abstract

Multi-layer resist lithography is a technique used to produce fine line pattering in semiconductor fabrication. Basically, a thick organic layer; or "sub-layer", is used to planarize the topography. A thin inorganic layer is then deposited on top as a barrier layer. Next, a resist layer is applied and the pattern is generated by subsequent exposure and develop. By a first RIE plasma, the exposed pattern is transferred to the barrier layer using the top image layer as a mask and then transferred to the sub-layer by using a second, different RIE plasma. (Image Omitted)

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Novel Use of Al2O3 Thin Film as a Barrier Layer in Multi-level Resist Structure

       Multi-layer resist lithography is a technique used to
produce fine line pattering in semiconductor fabrication. Basically,
a thick organic layer; or "sub-layer", is used to planarize the
topography.  A thin inorganic layer is then deposited on top as a
barrier layer.  Next, a resist layer is applied and the pattern is
generated by subsequent exposure and develop.  By a first RIE plasma,
the exposed pattern is transferred to the barrier layer using the top
image layer as a mask and then transferred to the sub-layer by using
a second, different RIE plasma.

                            (Image Omitted)

      As mentioned above, two plasma etches are required for the
conventional multi-level resist process, e.g., a CF4 plasma for the
barrier etch and 02 plasma for the sub-layer. The two RIE steps are
normally carried out in separate etch reactors due to the
incompatibility of the etch properties.

      A new self-develop material can be used for the barrier layer
such that dry etch of barrier layer can be eliminated. A layer of
PECVD A1203 in the range of 500 to 1000 Angstroms is proposed as the
barrier layer.  Experimental results indicate there are several
advantages of using this barrier layer:
      (1) Low deposition temperature, less that 300oC.
      (2) Good deposition uniformity, less than 5% of standard
deviation.
      (3)...