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Boron Nitride Self Aligned Stud Dual Damascene Process

IP.com Disclosure Number: IPCOM000107255D
Original Publication Date: 1992-Feb-01
Included in the Prior Art Database: 2005-Mar-21
Document File: 3 page(s) / 126K

Publishing Venue

IBM

Related People

Cote, D: AUTHOR [+3]

Abstract

A key requirement of the current generation of semiconductor interconnect process technologies is the precise alignment and dimensional control necessary to achieve maximum wiring density. Improvements in these areas will be necessary to improve the wiring density, as well as the chip functional yield.

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Boron Nitride Self Aligned Stud Dual Damascene Process

       A key requirement of the current generation of
semiconductor interconnect process technologies is the precise
alignment and dimensional control necessary to achieve maximum wiring
density.  Improvements in these areas will be necessary to improve
the wiring density, as well as the chip functional yield.

      A process technology has been developed that produces a self-
aligned via to interconnect wiring structure, consequently which
improves the wiring density and chip functional yield.  After the
blanket deposition of the first conductor metal, a layer of Boron
Nitride (BN) is deposited. The first conductor photo level (M1) is
patterned using photolithography (Fig. 1).  The M1 pattern is
transferred into BN and the M1 metal films using Reactive Ion Etching
(RIE), and the photoresist is subsequently removed.  This is
presented in Fig. 2.  A layer of silicon dioxide is deposited by
Chemical Vapor Deposition (CVD Oxide) and planarized to the top of
the BN layer.  Next, an additional layer of CVD oxide is deposited.
This layer will ultimately serve as the dielectric between the M1 and
M2 conductor levels.  The resulting structure is shown in Fig. 3.
The M2 photo level is patterned using photolithography (Fig. 4).  The
M2 features are transferred into the CVD oxide layer using RIE. The
etch process is continued until the BN layer is reached. The
remaining photoresist is stripped (Fig. 5).  The fir...