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Browse Prior Art Database

Multilevel Interconnection Structure

IP.com Disclosure Number: IPCOM000107335D
Original Publication Date: 1992-Feb-01
Included in the Prior Art Database: 2005-Mar-21
Document File: 1 page(s) / 41K

Publishing Venue

IBM

Related People

Ho, PS: AUTHOR [+2]

Abstract

The progress toward greater miniaturization in the field of integrated circuitry leads to increased wiring level for improving performance. Current advanced generation products typically require three or more levels of interconnects. A fully planarized multilevel structure which consists of W studs and Ti/Al(Cu) metal lines has applied in the logic and high performance SRAM chips (*). (Image Omitted)

This text was extracted from an ASCII text file.
This is the abbreviated version, containing approximately 84% of the total text.

Multilevel Interconnection Structure

       The progress toward greater miniaturization in the field
of integrated circuitry leads to increased wiring level for improving
performance.  Current advanced generation products typically require
three or more levels of interconnects.  A fully planarized multilevel
structure which consists of W studs and Ti/Al(Cu) metal lines has
applied in the logic and high performance SRAM chips (*).

                            (Image Omitted)

      A multilevel structure shown in the figure using an organic
material, polyimide or other polymers with low dielectric constant,
in the metal level and low dielectric constant inorganic material,
e.g.  SiO2, in the inter-level connection, is disclosed.  This
structure offers two advantages over one built with only polyimide
layers. First, the polyimide in the proposed structure is concealed
by SiO2 to reduce solve exposure and subsequent stress-induced
cracking.  Second, it is relatively simple to planarize the SiO2
layer so the planarization of the proposed structure can be achieved
by controlling the process for alternate SiO2 layer.  The use of SiO2
in the proposed structure will somewhat increase the line delay, as
compared with one built only with polyimide layers, because of the
higher dielectric constant of SiO2 .  This disadvantage is well
compensated for by the improved reliability and process ability of
the structure.

      Reference
(*)  D....