Browse Prior Art Database

Process to Control the Dimensions and Positions of Critical Images in Semiconductor Wafer Technology

IP.com Disclosure Number: IPCOM000107543D
Original Publication Date: 1992-Mar-01
Included in the Prior Art Database: 2005-Mar-21
Document File: 2 page(s) / 69K

Publishing Venue

IBM

Related People

Lamande, JD: AUTHOR [+3]

Abstract

A technique is disclosed that permits controlling the positions and dimensions of images in semiconductor wafer technology. A semiconductor wafer includes a plurality of chips wherein, in each chip, the key portion is to be distinguished from the active part or cell. This technique permits finding images in the active cell which present most deviation risks. The conventional techniques allow only the control of images placed on the boundary of the active cell and these images fall out during wafer dicing. So, if compared to the present technique, these conventional techniques have the great disadvantage not to find systematically the errors generated by the exposure system and process asociated therewith.

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Process to Control the Dimensions and Positions of Critical Images in Semiconductor Wafer Technology

       A technique is disclosed that permits controlling the
positions and dimensions of images in semiconductor wafer technology.
A semiconductor wafer includes a plurality of chips wherein, in each
chip, the key portion is to be distinguished from the active part or
cell. This technique permits finding images in the active cell which
present most deviation risks. The conventional techniques allow only
the control of images placed on the boundary of the active cell and
these images fall out during wafer dicing. So, if compared to the
present technique, these conventional techniques have the great
disadvantage not to find systematically the errors generated by the
exposure system and process asociated therewith. To solve the
above-mentioned problem, we have created an approach allowing the
control of the manufacturing process reproduceability. The novel
technique aims to find the images placed in the active cell which
presents the greatest displacement or dimension deviation risks
should a problem occur during the manufacturing process. The rules
have been defined using specific parameters which concern the
exposition, development and etching process steps, the metrology tool
constraints, and the mask/reticle specifications.

                            (Image Omitted)

      Two groups of controls using this technique may be found: the
fir...