Browse Prior Art Database

Dry Etching of Alumina for Device Manufacturing

IP.com Disclosure Number: IPCOM000107895D
Original Publication Date: 1992-Mar-01
Included in the Prior Art Database: 2005-Mar-22
Document File: 1 page(s) / 21K

Publishing Venue

IBM

Related People

Burke, PA: AUTHOR [+3]

Abstract

A practical combination of process parameters has been found that permits the dry etching of alumina for device manufacturing. Anisotropic etching of alumina at an appreciable rate is achieved, along with reasonable selectivities to silicon dioxide and silicon nitride.

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Dry Etching of Alumina for Device Manufacturing

      A practical combination of process parameters has been found
that permits the dry etching of alumina for device manufacturing.
Anisotropic etching of alumina at an appreciable rate is achieved,
along with reasonable selectivities to silicon dioxide and silicon
nitride.

      Successful alumina dry etching depends on a unique combination
of the following process parameters:
       1. high magnetron power density
       2. chlorine-based chemistry
       3. high temperature
       4. low pressures.
No wet etching steps are required and alumina undercutting is
minimized.

      Disclosed anonymously.