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Diamond Films as a Barrier Layer and Substrate Surface for Hi Tc Superconductors

IP.com Disclosure Number: IPCOM000107934D
Original Publication Date: 1992-Mar-01
Included in the Prior Art Database: 2005-Mar-22
Document File: 1 page(s) / 19K

Publishing Venue

IBM

Related People

Cuomo, JJ: AUTHOR

Abstract

With the availability of large area polycrystalline diamond films, diamond has been found to be inert to the oxide superconductors, in particular, the ReBa2Cu3O7 Re = Y, La, Nd, Gd, Er. The substrate is best used at lower deposition conditions, i.e., about 500 to 600~C. With its low dielectric constant 5.5 and its compatibility with silicon, polycrystalline diamond provides a suitable substrate surface for the high Tc superconducting materials.

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Diamond Films as a Barrier Layer and Substrate Surface for Hi Tc Superconductors

      With the availability of large area polycrystalline diamond
films, diamond has been found to be inert to the oxide
superconductors, in particular, the ReBa2Cu3O7 Re = Y, La, Nd, Gd,
Er.  The substrate is best used at lower deposition conditions, i.e.,
about 500 to 600~C.  With its low dielectric constant 5.5 and its
compatibility with silicon, polycrystalline diamond provides a
suitable substrate surface for the high Tc superconducting materials.

      Disclosed anonymously.