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New High Contrast High Tg Organosilicon Resist Material

IP.com Disclosure Number: IPCOM000107935D
Original Publication Date: 1992-Mar-01
Included in the Prior Art Database: 2005-Mar-22
Document File: 1 page(s) / 38K

Publishing Venue

IBM

Related People

Babich, E: AUTHOR [+6]

Abstract

Incorporation of naphthenyl groups along with 2,1,5- or 2,1,4- naphthoquinone diazogroups into linear polysiloxanes, containing pendant 3-aminopropyl groups according to the following two-step scheme: (Image Omitted) leads to the formation of near UV and e-beam sensistive mateirals with much higher glass transition temperature (Tg) compared to polydimethylsiloxanes. Such new materials when used as thin films on susbstrates work as negative tone (crosslineable) resists with e-beam sensitivities of about 1,6 - 10uC/cm2 (depending on the diazo-group content) and near UV sensitivity of about 10 mJ/cm2 having contrast of about 2 or more. Because of high silicon content they can be used as an imageable top layer in double layer technique for oxygen RIE plasma pattern transfer.

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New High Contrast High Tg Organosilicon Resist Material

      Incorporation of naphthenyl groups along with 2,1,5- or 2,1,4-
naphthoquinone diazogroups into linear polysiloxanes, containing
pendant 3-aminopropyl groups according to the following two-step
scheme:

                            (Image Omitted)

leads to the formation of near UV and e-beam sensistive mateirals
with much higher glass transition temperature (Tg) compared to
polydimethylsiloxanes.  Such new materials when used as thin films on
susbstrates work as negative tone (crosslineable) resists with e-beam
sensitivities of about 1,6 - 10uC/cm2 (depending on the diazo-group
content) and near UV sensitivity of about 10 mJ/cm2 having contrast
of about 2 or more.  Because of high silicon content they can be used
as an imageable top layer in double layer technique for oxygen RIE
plasma pattern transfer.  New resists are thermally stable up to
350~C after irradiation.

      Disclosed anonymously.