Browse Prior Art Database

Etch Process using Silylated Dual Tone Resist

IP.com Disclosure Number: IPCOM000108005D
Original Publication Date: 1992-Apr-01
Included in the Prior Art Database: 2005-Mar-22
Document File: 1 page(s) / 46K

Publishing Venue

IBM

Related People

Cheng, JC: AUTHOR [+4]

Abstract

Disclosed is a lithographic process wherein two structures of different depths are etched into a substrate. Both structures are defined in a single imagewise exposure, self-aligned, and can be generated using dry (plasma) rather than wet-etching techniques in the image transfer process. Finally, processing the dual-tone resist composition in this fashion yields two positive tone relief images. The first positive tone image is generated by liquid development techniques and the second positive tone image is developed with an oxygen plasma.

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Etch Process using Silylated Dual Tone Resist

       Disclosed is a lithographic process wherein two
structures of different depths are etched into a substrate.  Both
structures are defined in a single imagewise exposure, self-aligned,
and can be generated using dry (plasma) rather than wet-etching
techniques in the image transfer process. Finally, processing the
dual-tone resist composition in this fashion yields two positive tone
relief images.  The first positive tone image is generated by liquid
development techniques and the second positive tone image is
developed with an oxygen plasma.

      In this process, a dual-tone resist composition such as that
described in U.S. Patent 4,767,723:
      1.   is applied to a substrate;
      2.   is exposed in a patternwise manner through a chromium-on-
quartz photomask having opaque areas (chromium), certain transparent
areas which transmit mid-UV light (quartz), and certain areas that
transmit only near-UV light;
      3.   develops those resist areas exposed to near-UV light with
a liquid developer such as Shipley MF 312 developer;
      4.   treats the remaining resist pattern with a liquid
silylating agent (for example, hexamethylcyclotrisilazane in xylene)
such that only those areas unexposed to light will incorporate
silicon;
      5.   uses a dry-etch process to transfer the resulting resist
image into the substrate;
      6.   uses an oxygen dry-etch process to remove...