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A Process for Making HTC Superconductor/(Si)Semiconductor Junctions

IP.com Disclosure Number: IPCOM000108177D
Original Publication Date: 1992-Apr-01
Included in the Prior Art Database: 2005-Mar-22
Document File: 1 page(s) / 56K

Publishing Venue

IBM

Related People

Aboelfotoh, MO: AUTHOR

Abstract

Disclosed is a novel process for making chemically and electrically stable HTc superconductor/(Si)semiconductor junctions for applications in very large-scale integration (VSLI) technology. Referring to Figs. 1 through 3, a layer of Ge 14 is first deposited to a thickness of 300 to 800 angstroms on the surface of the Si substrate 10 exposed through the silicon oxide layer 12, followed by the deposition of a Cu layer 16 to a thickness of 700 to 1300 angstroms, as shown in Fig. 1. The structure is then heated to a temperature of 200 to 400oC for a period of 10 to 30 minutes to form the copper germanide Cu3Ge layer 18, as shown in Fig. 2. This is followed by the deposition of a YBaCuO layer 20 to a thickness of 1000 to 5000 angstroms over the copper germanide Cu3Ge layer 18, as shown in Fig. 3.

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A Process for Making HTC Superconductor/(Si)Semiconductor Junctions

      Disclosed is a novel process for making chemically and
electrically stable HTc superconductor/(Si)semiconductor junctions
for applications in very large-scale integration (VSLI) technology.
Referring to Figs. 1 through 3, a layer of Ge 14 is first deposited
to a thickness of 300 to 800 angstroms on the surface of the Si
substrate 10 exposed through the silicon oxide layer 12, followed by
the deposition of a Cu layer 16 to a thickness of 700 to 1300
angstroms, as shown in Fig. 1.  The structure is then heated to a
temperature of 200 to 400oC for a period of 10 to 30 minutes to form
the copper germanide Cu3Ge layer 18, as shown in Fig. 2.  This is
followed by the deposition of a YBaCuO layer 20 to a thickness of
1000 to 5000 angstroms over the copper germanide Cu3Ge layer 18, as
shown in Fig. 3.  The structure is then heated in an oxygen
atmosphere to induce superconductivity in layer 20.  The structure of
Fig. 3 is found to be chemically, as well as electrically stable,
demonstrating for the first time the feasibility of forming stable
HTc superconductor/Cu3Ge/(Si) semiconductor junctions.

      Disclosed anonymously.