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Metal Etch Masks for Reactive Ion Etching of N58

IP.com Disclosure Number: IPCOM000108368D
Original Publication Date: 1992-May-01
Included in the Prior Art Database: 2005-Mar-22
Document File: 1 page(s) / 45K

Publishing Venue

IBM

Related People

Doss, SK: AUTHOR [+4]

Abstract

Disclosed is a reactive ion etch (RIE) process for patterning on N58 air bearing surfaces (ABS), by using a metal etch mask instead of the current, negative photoresist mask.

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Metal Etch Masks for Reactive Ion Etching of N58

       Disclosed is a reactive ion etch (RIE) process for
patterning on N58 air bearing surfaces (ABS), by using a metal etch
mask instead of the current, negative photoresist mask.

      In this RIE process, approximately 2 microns of Ni(P) or 4
microns of Cu masks are etched away, in the time required to etch
approximately 16 microns of N58.  The Ni(P) mask is prepared by using
a thin MYLAR* film with an adhesive on one side for the purpose of
lift off, using a solvent.  A thin metallized Pd film is the active
layer (catalyst), on the other side of the MYLAR.  After applying,
exposing, and developing the positive photoresist, 3 to 4 microns of
Ni(P) is plated in the developed areas of the active Pd film.  The
Ni(P) film is deposited from an electroless bath (*).  When Cu is
used as the mask, it is put down by electrodeposition.  No barrier
layer is needed. A selective wet etchant is used to strip off the Cu
after RIE process.  These metal etch masks produce straight side
walls on the RIE etched parts.  The metal mask also provides
corrosion protection for the Permalloy pole tips, during the RIE
process.

      The positive photoresist process which uses an aqueous alkaline
developer, eliminates the use of trichloroethylene and FREON*
solvents.  The solvent's elimination has a favorable impact on the
environment.

      The metal masks eliminate the redeposition product which
accumulates on the edg...