Browse Prior Art Database

Single Resist for Dual Type Metal Apply Plate-up and Lift-off

IP.com Disclosure Number: IPCOM000108418D
Original Publication Date: 1992-May-01
Included in the Prior Art Database: 2005-Mar-22
Document File: 1 page(s) / 48K

Publishing Venue

IBM

Related People

Perfecto, ED: AUTHOR [+4]

Abstract

A novel method to make use of lift-off metal capping on top of plate-up metal patterns is disclosed here.

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This is the abbreviated version, containing approximately 100% of the total text.

Single Resist for Dual Type Metal Apply Plate-up and Lift-off

      A novel method to make use of lift-off metal capping on top of
plate-up metal patterns is disclosed here.

      The figure shows the process flow of this new application.
First, the conductive seed layer is deposited by evaporation or
sputtering.  A photoresist is spun, exposed and developed (1).
Metal, such as copper, is then plated into the patterned area (2).
The patterned resist is then subjected to silylation process to
create an overhang (3) to form a lift-off structure.  This lift-off
stencil is then used for depositing a protective metal layer on top
of the plated copper layer (4).  After the evaporation of the
protective metal, the metal on top of the silylated resist is
lifted-off with suitable solvents.  A blank etching for the seed
layer metal(s) follows (5).  This method enables a simple,
self-aligned deposition of a protective metal on plated copper
conductors.

      Disclosed anonymously.