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An Improved COC Process by Adhesion Promoter Layer

IP.com Disclosure Number: IPCOM000108429D
Original Publication Date: 1992-May-01
Included in the Prior Art Database: 2005-Mar-22
Document File: 1 page(s) / 29K

Publishing Venue

IBM

Related People

Howard, JK: AUTHOR [+4]

Abstract

In DC magnetron sputter systems, for good thermal and electrical conductivities, copper is used as the anode material. In the carbon sputtering, a poor adhesion was found between the interface of the C film and the Cu anode surface. This poor adhesion can cause a serious film delamination and flaking, especially at the anode edge area. Those flakes turn out to be system particle contamination sources. It can also cause C target nodule formation. Consequently the glide height yield can be drastically dropped. An adhesion promoter layer strategy is used to overcome this problem. A thin adhesion layer, such as Cr, Si or Ti, is sputtered on the surface of the Cu anode. Due to their excellent adhesion to the C-film, the film flakes and delaminations are eliminated.

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An Improved COC Process by Adhesion Promoter Layer

      In DC magnetron sputter systems, for good thermal and
electrical conductivities, copper is used as the anode material.  In
the carbon sputtering, a poor adhesion was found between the
interface of the C film and the Cu anode surface.  This poor adhesion
can cause a serious film delamination and flaking, especially at the
anode edge area. Those flakes turn out to be system particle
contamination sources.  It can also cause C target nodule formation.
Consequently the glide height yield can be drastically dropped.  An
adhesion promoter layer strategy is used to overcome this problem.  A
thin adhesion layer, such as Cr, Si or Ti, is sputtered on the
surface of the Cu anode.  Due to their excellent adhesion to the
C-film, the film flakes and delaminations are eliminated.  Then the
particle contamination is drastically reduced, and the glide height
yield can also be much improved.

      Disclosed anonymously.